Call for papers

Topic Code

Topic Name

1

Advanced CMOS Devices

Ultimate CMOS scaling for high performance, low power and low voltage devices, novel MOS device architectures (double and multiple gate, vertical, ballistic), circuit/device interaction and co-optimization, high-mobility channel engineered devices, SOI, SGOI, and SiON devices; SiGe, Ge, and strained devices. 3D integrated circuits.

2

Process & Integration

Front-end and back-end processes for fabrication of nano-electronic and ULSI circuits, including: substrate technologies (bulk, SOI, SGOI), cleaning and surface preparation, high-k, metal electrodes, gate stack, shallow junction technology, silicides, lithography, etching, isolation technologies, multilevel interconnects, low-k dielectrics; 3D heterogeneous integration of various functions (e.g. sensing, storing, processing, actuation, communication and energy scavenging) for smart Microsystems; advances in integration of smart power devices; logic and mixed-mode IC manufacturing; RF integration (passives, active devices), sensors and photonics integration; advanced packaging.

3

Modeling and Simulation

Numerical, analytical and statistical modeling of solid-state electronic and optoelectronic devices, quantum mechanical and non-stationary transport phenomena, ballistic transport, compact circuit modeling for devices and interconnects, modeling and simulation of front-end and back-end fabrication processes, electro-thermal modeling and simulation.

4

Characterization, Reliability and Yield

Characterization techniques, parameter extraction, advanced test structures and methodologies, reliability issues for new materials and devices (reliability of high-k and low-k materials), reliability of advanced interconnects, ESD, soft errors, noise and mismatch behavior, bias temperature inestabilities, EMI, defect monitoring and control, metrology, impact of back-end processing on devices, manufacturing technologies for reliability, physics of failure analysis

5

Memories

Novel memory cell concepts, embedded and stand-alone memories, DRAM, FeRAM, MRAM, PCRAM, CBRAM, Flash, SONOS, nanocrystal memories, single and few electron memories, 3D IC stacks, organic memories, NEMS-based device, 3D integration, reliability and modeling.

6

MEMS, Displays and SoC

Design, fabrication, modeling, reliability and packaging of all physical sensors and MEMS categories, bio-sensors for chemical, molecular and biological applications, BioMEMS, devices and technologies for lab-on-chip, integration of detectors, sensors, and actuators, CCDs and CMOS imagers, optical on chip communication, display technologies, TFTs, organic electronics, flexible substrate electronics, SoC and SiP packaging, microsystem packaging. Topics of interest in the MEMS area include resonators, switches, and passives for RF applications, integrated sensors, micro-optical devices, micro-fluidic and biomedical devices, micro power generators and energy harvesting devices, with particular emphasis on integrated implementations.

7

Emerging non-CMOS devices and technologies

Nanotubes, nanowires and nanoparticles for electronic, optoelectronic and sensor applications, materials and device related issues, single-electron, molecular and quantum devices, nanophotonics, spintronics, self-assembling methods, photonic devices. Printed and flexible substrate electronics. New device characterization techniques and performance evaluation methodologies.

8

Power, High Frequency, and optoelectronics semiconductor devices

Compound semiconductors (GaAs, InP)  based devices with particular emphasis to III-N and SiC wide bandgap semiconductors (GaN, InN, ..) and MOS on III-V and III-N.  Optoelectronic devices (LED, laser diodes, photodiodes, …). Si-based optoelectronics are also very welcome. Smart power, high-voltage, high power, high temperature operation and CMOS compatible power devices. RF CMOS, analog and mixed signal devices, passives, antennas, filters, RF MEMS, Bipolar, BiCMOS,  IC cooling. Discrete and integrated high power/current/voltage devices. Integrated RF components including inductors, capacitors, and switches.